1-6GHz Microwave RF Power Amplifier GaN Power Amplifier Module with Excellent Linearity

Product Details
Customization: Available
Usage: Telephone, Workstation, 5g Communication Base Stations
Type: Wireless
Diamond Member Since 2025

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Year of Establishment
2025-04-01
Plant Area
80 square meters
  • 1-6GHz Microwave RF Power Amplifier GaN Power Amplifier Module with Excellent Linearity
  • 1-6GHz Microwave RF Power Amplifier GaN Power Amplifier Module with Excellent Linearity
  • 1-6GHz Microwave RF Power Amplifier GaN Power Amplifier Module with Excellent Linearity
  • 1-6GHz Microwave RF Power Amplifier GaN Power Amplifier Module with Excellent Linearity
  • 1-6GHz Microwave RF Power Amplifier GaN Power Amplifier Module with Excellent Linearity
  • 1-6GHz Microwave RF Power Amplifier GaN Power Amplifier Module with Excellent Linearity
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  • Overview
  • Product Description
  • After Sales Service
  • Recommended Products
  • Company Profile
  • FAQ
Overview

Basic Info.

Model NO.
RTPA 1-6GHz 100W
Support Network
GSM
Information content
Data
Certification
ISO
Condition
New
Output Power (Max)
100W
Gain (Max)
50dB
Avg Output Power P-1
50W
Gain Flatness
±3.0dB
Harmonic
-15dbc
Spurious
-60dbc
Working Temperature
-20~+60ºC
Name
GaN RF Power Amplifier
Key
Solid State RF Power Amplifier
Transport Package
Carton
Trademark
180*100*20mm
Origin
China
Production Capacity
2000/Month

Product Description

1-6GHz Microwave RF Power Amplifier GaN Power Amplifier Module with Excellent Linearity

Product Description

This RF power amplifier operates within a frequency range covering 1 - 6GHz and has an output power of up to 100W. With its wide frequency band and high power characteristics, it can meet the signal amplification requirements of various communication, radar and other devices. It adopts advanced technologies to achieve highly linear amplification and high-efficiency conversion, which can reduce signal distortion and power consumption. Meanwhile, high-quality components are selected, and protection functions such as over-temperature and over-current protection are equipped to ensure stable operation in complex environments. It is widely used in 5G communication base stations, radar transmitters, electronic warfare jamming equipment, as well as various RF testing systems.
1-6GHz Microwave RF Power Amplifier GaN Power Amplifier Module with Excellent Linearity
1-6GHz Microwave RF Power Amplifier GaN Power Amplifier Module with Excellent Linearity
Operating  Specifications
Parameter Min Typ Max Units
Frequency 1.0 --- 6.0 GHz
Avg Output PowerPast 100 --- --- Watts
Avg Output Power P-1 50 --- --- Watts
Gain 50 --- --- dB
Power In --- --- 0 dBm
Supply Voltage     30 V
Supply   Power --- --- 600 W
Gain Flatness --- ±3 --- dB
Harmonic --- -15 --- dBc
Spurious --- -60 --- dBc
Storage  Temp -20 --- 60 ºC
Case Oper Temp 0 --- 40 ºC
Input VSWR --- 2.0 ---  
Output VSWR --- -- ---  
Nominal impedance --- 50 --- Ω
Amplifier Safeguard Temp 60 --- --- ºC
Safeguard Power In 3 --- --- dBm
Connector RFin:SMA-F,RFout:N-F
Dimension Within180*100*20mm
Control system none

1-6GHz Microwave RF Power Amplifier GaN Power Amplifier Module with Excellent Linearity1-6GHz Microwave RF Power Amplifier GaN Power Amplifier Module with Excellent Linearity

After Sales Service

1-6GHz Microwave RF Power Amplifier GaN Power Amplifier Module with Excellent Linearity

 

Recommended Products

 

1-6GHz Microwave RF Power Amplifier GaN Power Amplifier Module with Excellent Linearity
1-6GHz Microwave RF Power Amplifier GaN Power Amplifier Module with Excellent Linearity

Company Profile


1-6GHz Microwave RF Power Amplifier GaN Power Amplifier Module with Excellent Linearity1-6GHz Microwave RF Power Amplifier GaN Power Amplifier Module with Excellent Linearity1-6GHz Microwave RF Power Amplifier GaN Power Amplifier Module with Excellent Linearity1-6GHz Microwave RF Power Amplifier GaN Power Amplifier Module with Excellent Linearity1-6GHz Microwave RF Power Amplifier GaN Power Amplifier Module with Excellent Linearity

FAQ

1. What are the criteria for selecting power amplifier transistors?
Match the frequency band range, power requirements, voltage/current parameters, and package compatibility. Focus on the frequency coverage, gain curve, and thermal resistance characteristics in the datasheet. Common materials include GaN and LDMOS.
2. How to match different application requirements?
5G communication requires high linearity and wide bandwidth; radar focuses on pulse response and stability; industrial equipment emphasizes heat dissipation and reliability. We recommend suitable solutions according to specific application scenarios (such as base stations, satellites, medical equipment, etc.).
3. How to achieve multi-band compatibility?
Achieved through broadband matching network design or modular solutions, customized according to customer frequency band requirements.
4. Are the products certified and compliant?
Products have passed electromagnetic compatibility test standards such as IEC61000-4-3, ISO11452-2, and RS103, suitable for various test systems like electronic countermeasures and radar.
5. What are the development cycle and cost of customized products?
It needs to be evaluated according to specific requirements such as frequency band, power, and package. It is recommended to provide detailed parameters for optimized solutions.
6. What is the warranty policy?
One-year free warranty for the whole machine from the delivery date, covering non-human performance failures.
7. Regarding cross-brand maintenance service
We support the repair of radio frequency power amplifiers of other foreign brands and provide accessory replacement services. Customers are required to provide the equipment model and a description of the fault.

 

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